A 45GHz AlGaAs/GaAs HBT IC technology without ion-implantation

S. J. Prasad; B. Vetanen; C. Haynes; S. Park; I. Beers; S. Diamond; G. Pubanz; J. Ebner; S. Sanielevici; A. Agoston

A 45GHz AlGaAs/GaAs HBT IC technology without ion-implantation

S. J. Prasad, B. Vetanen, C. Haynes, S. Park, I. Beers, S. Diamond, G. Pubanz, J. Ebner, S. Sanielevici, A. Agoston

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.

Original language	English (US)
Title of host publication	European Solid-State Device Research Conference
Editors	Herman E. Maes, Roger J. Van Overstraeten, Robert P. Mertens
Publisher	IEEE Computer Society
Pages	413-416
Number of pages	4
ISBN (Electronic)	0444894780
State	Published - 1992
Externally published	Yes
Event	22nd European Solid State Device Research Conference, ESSDERC 1992 - Leuven, Belgium Duration: Sep 14 1992 → Sep 17 1992

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	22nd European Solid State Device Research Conference, ESSDERC 1992
Country/Territory	Belgium
City	Leuven
Period	9/14/92 → 9/17/92

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Cite this

Prasad, S. J., Vetanen, B., Haynes, C., Park, S., Beers, I., Diamond, S., Pubanz, G., Ebner, J., Sanielevici, S., & Agoston, A. (1992). A 45GHz AlGaAs/GaAs HBT IC technology without ion-implantation. In H. E. Maes, R. J. Van Overstraeten, & R. P. Mertens (Eds.), European Solid-State Device Research Conference (pp. 413-416). Article 5435129 (European Solid-State Device Research Conference). IEEE Computer Society.

A 45GHz AlGaAs/GaAs HBT IC technology without ion-implantation. / Prasad, S. J.; Vetanen, B.; Haynes, C. et al.
European Solid-State Device Research Conference. ed. / Herman E. Maes; Roger J. Van Overstraeten; Robert P. Mertens. IEEE Computer Society, 1992. p. 413-416 5435129 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Prasad, SJ, Vetanen, B, Haynes, C, Park, S, Beers, I, Diamond, S, Pubanz, G, Ebner, J, Sanielevici, S & Agoston, A 1992, A 45GHz AlGaAs/GaAs HBT IC technology without ion-implantation. in HE Maes, RJ Van Overstraeten & RP Mertens (eds), European Solid-State Device Research Conference., 5435129, European Solid-State Device Research Conference, IEEE Computer Society, pp. 413-416, 22nd European Solid State Device Research Conference, ESSDERC 1992, Leuven, Belgium, 9/14/92.

@inproceedings{21f2535f88394b45b583e1d6c54ca1b4,

title = "A 45GHz AlGaAs/GaAs HBT IC technology without ion-implantation",

abstract = "A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.",

author = "Prasad, {S. J.} and B. Vetanen and C. Haynes and S. Park and I. Beers and S. Diamond and G. Pubanz and J. Ebner and S. Sanielevici and A. Agoston",

note = "Publisher Copyright: {\textcopyright} 1992 Elsevier.; 22nd European Solid State Device Research Conference, ESSDERC 1992 ; Conference date: 14-09-1992 Through 17-09-1992",

year = "1992",

language = "English (US)",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "413--416",

editor = "Maes, {Herman E.} and {Van Overstraeten}, {Roger J.} and Mertens, {Robert P.}",

booktitle = "European Solid-State Device Research Conference",

}

TY - GEN

T1 - A 45GHz AlGaAs/GaAs HBT IC technology without ion-implantation

AU - Prasad, S. J.

AU - Vetanen, B.

AU - Haynes, C.

AU - Park, S.

AU - Beers, I.

AU - Diamond, S.

AU - Pubanz, G.

AU - Ebner, J.

AU - Sanielevici, S.

AU - Agoston, A.

PY - 1992

Y1 - 1992

N2 - A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.

AB - A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.

UR - http://www.scopus.com/inward/record.url?scp=84926409670&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926409670&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84926409670

T3 - European Solid-State Device Research Conference

SP - 413

EP - 416

BT - European Solid-State Device Research Conference

A2 - Maes, Herman E.

A2 - Van Overstraeten, Roger J.

A2 - Mertens, Robert P.

PB - IEEE Computer Society

T2 - 22nd European Solid State Device Research Conference, ESSDERC 1992

Y2 - 14 September 1992 through 17 September 1992

ER -

A 45GHz AlGaAs/GaAs HBT IC technology without ion-implantation

Abstract

Publication series

Conference

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this