A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation

S. J. Prasad; B. Vetanen; C. Haynes; S. Park; I. Beers; S. Diamond; G. Pubanz; J. Ebner; S. Sanielevici; A. Agoston

doi:10.1016/0167-9317(92)90465-4

A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation

S. J. Prasad
, B. Vetanen
, C. Haynes
, S. Park
, I. Beers
, S. Diamond
, G. Pubanz
, J. Ebner
, S. Sanielevici
, A. Agoston

Research output: Contribution to journal › Article › peer-review

Abstract

A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.

Original language	English (US)
Pages (from-to)	413-416
Number of pages	4
Journal	Microelectronic Engineering
Volume	19
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(92)90465-4
State	Published - Sep 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(92)90465-4

Cite this

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title = "A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation",

abstract = "A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.",

author = "Prasad, \{S. J.\} and B. Vetanen and C. Haynes and S. Park and I. Beers and S. Diamond and G. Pubanz and J. Ebner and S. Sanielevici and A. Agoston",

year = "1992",

month = sep,

doi = "10.1016/0167-9317(92)90465-4",

language = "English (US)",

volume = "19",

pages = "413--416",

journal = "Microelectronic Engineering",

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TY - JOUR

T1 - A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation

AU - Prasad, S. J.

AU - Vetanen, B.

AU - Haynes, C.

AU - Park, S.

AU - Beers, I.

AU - Diamond, S.

AU - Pubanz, G.

AU - Ebner, J.

AU - Sanielevici, S.

AU - Agoston, A.

PY - 1992/9

Y1 - 1992/9

N2 - A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.

AB - A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.

UR - https://www.scopus.com/pages/publications/0026927754

UR - https://www.scopus.com/pages/publications/0026927754#tab=citedBy

U2 - 10.1016/0167-9317(92)90465-4

DO - 10.1016/0167-9317(92)90465-4

M3 - Article

AN - SCOPUS:0026927754

SN - 0167-9317

VL - 19

SP - 413

EP - 416

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation

Abstract

ASJC Scopus subject areas

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