Layered Ruthenium Oxides: From Band Metal to Mott Insulator

A. V. Puchkov; M. C. Schabel; D. N. Basov; T. Startseva; G. Cao; T. Timusk; Z. X. Shen

doi:10.1103/PhysRevLett.81.2747

Layered Ruthenium Oxides: From Band Metal to Mott Insulator

A. V. Puchkov
, M. C. Schabel
, D. N. Basov
, T. Startseva
, G. Cao
, T. Timusk
, Z. X. Shen

Research output: Contribution to journal › Article › peer-review

106 Scopus citations

Abstract

We present results of the first optical and angle-resolved photoemission study on a layered ruthenium oxide system with various Ca/Sr substitution levels. Using two-plane (Sr_1-xCa_x)₃Ru₂O₇ and one-plane Ca2RuO4 crystals we were able to study evolution of the electronic properties in a range from a band metal 8(Sr₃Ru₂O₇) to a “bad” metal (Ca₃Ru₂O₇) to a Mott-Hubbard insulator (Ca₂)RuO₄). Apart from a Mott-Hubbard metal-insulator transition (MIT), we have uncovered a qualitative change of the electronic properties at a critical x=0.33. We suggest that the latter is a result of a quantum phase transition into an antiferromagnetic phase that precedes the real Mott-Hubbard MIT.

Original language	English (US)
Pages (from-to)	2747-2750
Number of pages	4
Journal	Physical Review Letters
Volume	81
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.81.2747
State	Published - Sep 28 1998
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.81.2747

Cite this

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title = "Layered Ruthenium Oxides: From Band Metal to Mott Insulator",

abstract = "We present results of the first optical and angle-resolved photoemission study on a layered ruthenium oxide system with various Ca/Sr substitution levels. Using two-plane (Sr1-xCax)3Ru2O7 and one-plane Ca2RuO4 crystals we were able to study evolution of the electronic properties in a range from a band metal 8(Sr3Ru2O7) to a “bad” metal (Ca3Ru2O7) to a Mott-Hubbard insulator (Ca2)RuO4). Apart from a Mott-Hubbard metal-insulator transition (MIT), we have uncovered a qualitative change of the electronic properties at a critical x=0.33. We suggest that the latter is a result of a quantum phase transition into an antiferromagnetic phase that precedes the real Mott-Hubbard MIT.",

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AU - Puchkov, A. V.

AU - Schabel, M. C.

AU - Basov, D. N.

AU - Startseva, T.

AU - Cao, G.

AU - Timusk, T.

AU - Shen, Z. X.

PY - 1998/9/28

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N2 - We present results of the first optical and angle-resolved photoemission study on a layered ruthenium oxide system with various Ca/Sr substitution levels. Using two-plane (Sr1-xCax)3Ru2O7 and one-plane Ca2RuO4 crystals we were able to study evolution of the electronic properties in a range from a band metal 8(Sr3Ru2O7) to a “bad” metal (Ca3Ru2O7) to a Mott-Hubbard insulator (Ca2)RuO4). Apart from a Mott-Hubbard metal-insulator transition (MIT), we have uncovered a qualitative change of the electronic properties at a critical x=0.33. We suggest that the latter is a result of a quantum phase transition into an antiferromagnetic phase that precedes the real Mott-Hubbard MIT.

AB - We present results of the first optical and angle-resolved photoemission study on a layered ruthenium oxide system with various Ca/Sr substitution levels. Using two-plane (Sr1-xCax)3Ru2O7 and one-plane Ca2RuO4 crystals we were able to study evolution of the electronic properties in a range from a band metal 8(Sr3Ru2O7) to a “bad” metal (Ca3Ru2O7) to a Mott-Hubbard insulator (Ca2)RuO4). Apart from a Mott-Hubbard metal-insulator transition (MIT), we have uncovered a qualitative change of the electronic properties at a critical x=0.33. We suggest that the latter is a result of a quantum phase transition into an antiferromagnetic phase that precedes the real Mott-Hubbard MIT.

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Layered Ruthenium Oxides: From Band Metal to Mott Insulator

Abstract

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