Abstract
The microstructural development and crystal structures of sputtered PLZT 9/65/35 films on r-plane sapphire with respect to deposition/annealing conditions were studied. The films were deposited at substrate temperatures below 500°C and annealed in the range 700° to 730°C for 1min to 20 min for complete perovskite formation either by rapid thermal annealing (RTA) or furnace annealing (FA). The optical transparency was excellent with smooth surfaces in the stoichiometric films but reduced in the Pb-deficient films. The grain sizes in the films varied from 0.1 μm to 0.8 μm and 0.2 μm to 1.2 μm after RTA and FA respectively.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 11-32 |
| Number of pages | 22 |
| Journal | Integrated Ferroelectrics |
| Volume | 19 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - 1998 |
| Externally published | Yes |
Keywords
- Film characterization
- Furnace annealing
- Microstructure
- PLZT films
- Rapid thermal annealing
- Sputtering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry