STI-bounded single-photon avalanche diode in a deep-submicrometer CMOS technology

Hod Finkelstein; Mark J. Hsu; Sadik C. Esener

doi:10.1109/LED.2006.883560

STI-bounded single-photon avalanche diode in a deep-submicrometer CMOS technology

Hod Finkelstein, Mark J. Hsu, Sadik C. Esener

Research output: Contribution to journal › Article › peer-review

122 Scopus citations

Abstract

This letter presents a novel and compact CMOS Geiger-mode single-photon avalanche diode (SPAD) device with an efficient guard ring structure for preventing edge breakdown. The new guard ring can withstand considerably higher electric fields than existing structures, and results in pixels which are an order of magnitude smaller and offer a nine-fold increase in fill factor compared with existing SPADs. The device has been studied numerically and experimentally on a 0.18-μm CMOS technology. Due to its small area, the detector can be operated with minimal power dissipation and has been verified to operate reliably over 5 × 10¹⁰ cycles. This is the first SPAD proven in a deep-submicrometer non-high-voltage technology and as such, provides unique opportunities for improved performance and for on-chip integration of the ultrafast timing circuitry required to translate the SPAD output into meaningful data.

Original language	English (US)
Pages (from-to)	887-889
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	11
DOIs	https://doi.org/10.1109/LED.2006.883560
State	Published - Nov 2006
Externally published	Yes

Keywords

Avalanche breakdown
Avalanche photodiodes
Photodetectors
Silicon radiation detectors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.883560

Cite this

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title = "STI-bounded single-photon avalanche diode in a deep-submicrometer CMOS technology",

abstract = "This letter presents a novel and compact CMOS Geiger-mode single-photon avalanche diode (SPAD) device with an efficient guard ring structure for preventing edge breakdown. The new guard ring can withstand considerably higher electric fields than existing structures, and results in pixels which are an order of magnitude smaller and offer a nine-fold increase in fill factor compared with existing SPADs. The device has been studied numerically and experimentally on a 0.18-μm CMOS technology. Due to its small area, the detector can be operated with minimal power dissipation and has been verified to operate reliably over 5 × 1010 cycles. This is the first SPAD proven in a deep-submicrometer non-high-voltage technology and as such, provides unique opportunities for improved performance and for on-chip integration of the ultrafast timing circuitry required to translate the SPAD output into meaningful data.",

keywords = "Avalanche breakdown, Avalanche photodiodes, Photodetectors, Silicon radiation detectors",

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AU - Esener, Sadik C.

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N2 - This letter presents a novel and compact CMOS Geiger-mode single-photon avalanche diode (SPAD) device with an efficient guard ring structure for preventing edge breakdown. The new guard ring can withstand considerably higher electric fields than existing structures, and results in pixels which are an order of magnitude smaller and offer a nine-fold increase in fill factor compared with existing SPADs. The device has been studied numerically and experimentally on a 0.18-μm CMOS technology. Due to its small area, the detector can be operated with minimal power dissipation and has been verified to operate reliably over 5 × 1010 cycles. This is the first SPAD proven in a deep-submicrometer non-high-voltage technology and as such, provides unique opportunities for improved performance and for on-chip integration of the ultrafast timing circuitry required to translate the SPAD output into meaningful data.

AB - This letter presents a novel and compact CMOS Geiger-mode single-photon avalanche diode (SPAD) device with an efficient guard ring structure for preventing edge breakdown. The new guard ring can withstand considerably higher electric fields than existing structures, and results in pixels which are an order of magnitude smaller and offer a nine-fold increase in fill factor compared with existing SPADs. The device has been studied numerically and experimentally on a 0.18-μm CMOS technology. Due to its small area, the detector can be operated with minimal power dissipation and has been verified to operate reliably over 5 × 1010 cycles. This is the first SPAD proven in a deep-submicrometer non-high-voltage technology and as such, provides unique opportunities for improved performance and for on-chip integration of the ultrafast timing circuitry required to translate the SPAD output into meaningful data.

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KW - Avalanche photodiodes

KW - Photodetectors

KW - Silicon radiation detectors

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STI-bounded single-photon avalanche diode in a deep-submicrometer CMOS technology

Abstract

Keywords

ASJC Scopus subject areas

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