@inproceedings{2465b41a3ae34b4f9e3174116080ef8c,
title = "A 45 GHz AlGaAs/GaAs HBT IC technology",
abstract = "A non-self-aligned HBT (heterojunction bipolar transistor) IC process with fT and fmax of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps risetime.",
author = "Prasad, {S. J.} and B. Vetanen and C. Haynes and S. Park and I. Beers and S. Diamond and G. Pubanz and J. Ebner and S. Sanielevici and A. Agoston",
year = "1992",
month = jan,
language = "English (US)",
isbn = "078030196X",
series = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
publisher = "Publ by IEEE",
pages = "121--124",
booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
note = "13th Annual GaAs IC Symposium Technical Digest ; Conference date: 20-10-1991 Through 23-10-1991",
}