Device testing for the development of an HBT IC process

S. Diamond; S. J. Prasad; J. Ebner; G. Pubanz; B. Vetanen; C. Haynes; S. Park; I. Beers

Device testing for the development of an HBT IC process

S. Diamond, S. J. Prasad, J. Ebner, G. Pubanz, B. Vetanen, C. Haynes, S. Park, I. Beers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A description is presented of the DC and microwave testing required for the development of an HBT (heterojunction bipolar transistor) integrated circuit process. Process control monitoring structures have been designed to allow device testing at several stages in processing. Wafer mapping of device parameters shows patterns which can help one to understand the process and improve yield. A database has been set up of device parameters. Examining the relation between various transistor parameters has led to experiments to understand the device current gain and has shown some unexpected results.

Original language	English (US)
Title of host publication	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publisher	Publ by IEEE
Pages	183-186
Number of pages	4
ISBN (Print)	078030196X
State	Published - Jan 1992
Externally published	Yes
Event	13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA Duration: Oct 20 1991 → Oct 23 1991

Publication series

Name	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Conference

Conference	13th Annual GaAs IC Symposium Technical Digest
City	Monterey, CA, USA
Period	10/20/91 → 10/23/91

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Device testing for the development of an HBT IC process. / Diamond, S.; Prasad, S. J.; Ebner, J. et al.
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, 1992. p. 183-186 (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Diamond, S, Prasad, SJ, Ebner, J, Pubanz, G, Vetanen, B, Haynes, C, Park, S & Beers, I 1992, Device testing for the development of an HBT IC process. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), Publ by IEEE, pp. 183-186, 13th Annual GaAs IC Symposium Technical Digest, Monterey, CA, USA, 10/20/91.

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AU - Prasad, S. J.

AU - Ebner, J.

AU - Pubanz, G.

AU - Vetanen, B.

AU - Haynes, C.

AU - Park, S.

AU - Beers, I.

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N2 - A description is presented of the DC and microwave testing required for the development of an HBT (heterojunction bipolar transistor) integrated circuit process. Process control monitoring structures have been designed to allow device testing at several stages in processing. Wafer mapping of device parameters shows patterns which can help one to understand the process and improve yield. A database has been set up of device parameters. Examining the relation between various transistor parameters has led to experiments to understand the device current gain and has shown some unexpected results.

AB - A description is presented of the DC and microwave testing required for the development of an HBT (heterojunction bipolar transistor) integrated circuit process. Process control monitoring structures have been designed to allow device testing at several stages in processing. Wafer mapping of device parameters shows patterns which can help one to understand the process and improve yield. A database has been set up of device parameters. Examining the relation between various transistor parameters has led to experiments to understand the device current gain and has shown some unexpected results.

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M3 - Conference contribution

AN - SCOPUS:0026623646

SN - 078030196X

T3 - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

SP - 183

EP - 186

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

PB - Publ by IEEE

T2 - 13th Annual GaAs IC Symposium Technical Digest

Y2 - 20 October 1991 through 23 October 1991

ER -

Device testing for the development of an HBT IC process

Abstract

Publication series

Conference

ASJC Scopus subject areas

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