The external efficiency of electroluminescence resulting from hot-carrier recombination has been studied in an InGaAsInAlAs avalanche photodiode. An analytical model that quantifies this emission is presented. Experimental data suggest that the emission originates from an intrinsic layer above the multiplication region. This electroluminescence mechanism offers a novel way for frequency upconversion, where the upconverted frequency can be controlled with proper choice of device layers. Lastly, we report for the first time the optical absorption properties of In0.52 Al0.48 As.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)