Abstract
An InxAlyGal-x-yAs device layer structure that enables the monolithic integration of In0.25Al0.75As/In0.15Ga0.85As MODFETs and In0.25Al0.35Ga0.40As/ln0.75Ga0.75As MQW modulators is reported. Current gain cutoff frequencies of 10GHz are measured for 1µm gate length MODFETs. MQW modulators operating at 1.05µm demonstrate 20% transmission modulation for an applied 8V.
Original language | English (US) |
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Pages (from-to) | 1713-1714 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 30 |
Issue number | 20 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
Keywords
- Integrated optoelectronics
- MODFETs
- Optical modulation
- Semiconductor quantum wells
ASJC Scopus subject areas
- Electrical and Electronic Engineering